Spts Technologies Limited

Codrin Prahoveanu

Huma Ashraf

Kevin Riddell

Maxime Varvara

A plasma etching apparatus for etching a semiconductor substrate comprises: a plasma chamber; a plasma generation device for sustaining a plasma within the plasma chamber; a substrate support disposed within the plasma chamber for supporting the semiconductor substrate, the substrate support comprising an electrically conductive structure; a power supply for providing an RF electrical signal having an RF power to the electrically conductive structure; and an annular dielectric ring structure comprising a backside surface, the backside surface comprising an electrically conductive coating; wherein the electrically conductive structure is spaced apart from and extends under the electrically conductive coating so that when RF power is provided to the electrically conductive structure the RF power couples to the electrically conductive coating. Associated methods are also disclosed.

Plasma etching apparatus and method

A structure comprising a substrate and a component which forms involatile metal etch products is plasma etched. A structure comprising a substrate and a component which forms involatile metal etch products is provided. The structure is positioned on a support within a chamber having a first gas inlet arrangement comprising one or more gas inlets and a second gas inlet arrangement comprising one or more gas inlets. The structure is etched by performing a first plasma etch step using a first etch process gas mixture which is only introduced into the chamber through the first gas inlet arrangement. The structure is further etched by performing a second plasma etch step using a second etch process gas mixture which is only introduced into the chamber through the second gas inlet arrangement.

Method and apparatus for plasma etching

A structure comprising a semiconductor substrate and a layer of PZT (lead zirconate titanate) is etched by performing a first plasma etch step with a first etch process gas mixture. The first etch process gas mixture comprises at least one fluorine containing species. The first plasma etch step is performed so that involatile metal etch products are deposited onto interior surfaces of the chamber. The structure is further etched by performing a second plasma etch step with a second etch process gas mixture. The second etch process gas mixture comprises at least one fluorocarbon species. The second plasma etch step is performed so that a fluorocarbon polymer layer is deposited onto interior surfaces of the chamber to overlay involatile metal etch products deposited in the first plasma etch step and to provide a substrate on which further involatile metal etch products can be deposited.

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Newport, United Kingdom

Codrin Prahoveanu