Fort Worth, TX, United States of America

Clinton M Newell

This inventor holds 1 USPTO granted patent. Top assignee: Lockheed Martin Corporation. Active years: 2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Clinton M Newell. Retrieved from https://idiyas.com/inventor/clinton-m-newell

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: Clinton M. Newell: Inventor in Advanced Materials

Introduction

Clinton M. Newell is an inventor based in Fort Worth, Texas, and is associated with Lockheed Martin Corporation. His work includes an invention focused on incorporating large-area graphene into polymer-based materials.

Latest Patents

Newell is credited with 1 patent, titled “Method of Making a Large Area Graphene Composite Material.” The invention describes embedding large-area graphene sheets in polymer-based materials to reinforce them or enhance their properties. The sheets may be nanoperforated or functionalized to improve their interaction with the polymer. Reactive functional groups can help form covalent bonds, integrating the graphene into the cross-linked structure of curable polymers. Nanoperforations can provide sites for functional groups and allow cross-links to form through the graphene sheets.

Career Highlights

Newell’s listed patent reflects work at the intersection of graphene engineering and polymer composites. The approach aims to make graphene an integrated component of a polymer material rather than simply an additive.

Collaborations

Newell’s listed coworker is Steven Edward Bullock. The patent information provided identifies Lockheed Martin Corporation as his company.

Conclusion

Clinton M. Newell’s patent describes a method for integrating large-area graphene into polymer composites, with the goal of improving material properties through bonding and cross-linking.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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