Clarence G Thornton

Title: The Innovative Contributions of Clarence G. Thornton

Introduction

Clarence G. Thornton is a notable inventor based in Colts Neck, NJ (US). He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to fabrication techniques for silicon microclusters. His work has implications for various applications in electronics and materials science.

Latest Patents

Thornton holds a patent for a "Fabrication technique for silicon microclusters using pulsed electrical." This invention describes a method of explosively vaporizing a piece of semiconductor material in a plasma formed by a fast, high voltage current pulse. The semiconductor material can be crystalline, polycrystalline, or amorphous. After vaporization, the material coalesces as the plasma cools and is deposited in a collection system. The size and composition of the microparticles formed can be controlled by conditioning the plasma in predetermined manners. Impurities can be introduced in various ways, enhancing the versatility of the process.

Career Highlights

Thornton is associated with the US Government as represented by the Secretary of the Army. His work in this capacity has allowed him to contribute to advancements in technology that support national interests and defense applications. His innovative approach to semiconductor fabrication has positioned him as a key figure in his field.

Collaborations

Thornton has collaborated with notable colleagues, including James F. Harvey and Robert A. Lux. These partnerships have likely fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Clarence G. Thornton's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the field. His work not only reflects his expertise but also has the potential to influence future developments in electronics and materials science.