The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 1993
Filed:
Oct. 30, 1992
Clarence G Thornton, Colts Neck, NJ (US);
James F Harvey, Tinton Falls, NJ (US);
Robert A Lux, Toms River, NJ (US);
Robert J Zeto, Eatontown, NJ (US);
Hardev Singh, Robbinsville, NJ (US);
Maurice Weiner, Ocean, NJ (US);
Terence Burke, Ocean, NJ (US);
Lawrence E Kingsley, Shrewsbury, NJ (US);
The United States of America as represented by the Secretary of the Army, Washington, DC (US);
Abstract
The present invention describes a method of explosively vaporizing a piece f semiconductor material in a plasma formed by a fast, high voltage current pulse. The semiconductor material may be formed from crystalline, polycrystalline, or amorphous forms of semiconductor material. After the semiconductor material is vaporized, it coalesces as the plasma begins to cool and is deposited in a collection system. The size and composition of the microparticles formed by this process can be controlled by conditioning the plasma in predetermined manners. In particular, impurities can be introduced either in the target material, in gas introduced in the plasma, or in the gas through which the coalescing microparticles travel prior to deposition.