Company Filing History:
Years Active: 2007-2009
Title: Claire Ravit: Innovator in Semiconductor Technology
Introduction
Claire Ravit is a prominent inventor based in Leuven, Belgium. She has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of strained semiconductor layers and devices. With a total of 2 patents, her work has advanced the capabilities of semiconductor devices, enhancing their performance and efficiency.
Latest Patents
Ravit's latest patents include a method of manufacturing a strained semiconductor layer and a method of manufacturing a semiconductor device with field isolation regions. The first patent focuses on creating a semiconductor body of silicon with a first semiconductor layer that has a mixed crystal lattice of silicon and germanium. This innovative approach allows for the formation of a strained silicon layer that improves the high-frequency properties of MOSFET devices. The second patent details a method for creating field isolation regions in a silicon body, utilizing an auxiliary layer that enhances the oxidation treatment process, leading to more effective isolation in semiconductor devices.
Career Highlights
Claire Ravit is currently employed at NXP B.V., where she continues to push the boundaries of semiconductor technology. Her expertise and innovative methods have positioned her as a key player in the industry, contributing to advancements that benefit various applications in electronics.
Collaborations
Throughout her career, Ravit has collaborated with notable colleagues, including Philippe Meunier-Beillard and Jurriaan Schmitz. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.
Conclusion
Claire Ravit's contributions to semiconductor technology exemplify her dedication to innovation and excellence in her field. Her patents reflect a deep understanding of the complexities involved in semiconductor manufacturing, paving the way for future advancements.