Company Filing History:
Years Active: 2004
Title: The Innovative Contributions of Cindy Seibel
Introduction
Cindy Seibel is a notable inventor based in Cameron Park, CA (US). She has made significant contributions to the field of semiconductor technology. Her innovative work has led to the development of a unique method for semiconductor gate doping.
Latest Patents
Cindy Seibel holds 1 patent for her invention titled "Method for semiconductor gate doping." This method involves forming a doped polycrystalline silicon gate in a Metal Oxide Semiconductor (MOS) device. The process begins with the formation of an insulation layer on a crystalline silicon substrate. An amorphous silicon layer is then created on top of this insulation layer, followed by the introduction of a dopant into the top surface of the amorphous silicon layer. The top surface is subsequently irradiated with a laser beam, causing it to melt and initiate explosive recrystallization (XRC) of the amorphous silicon layer. This innovative XRC process transforms the amorphous silicon into a polycrystalline silicon gate, ensuring a homogeneous distribution of the dopant throughout the gate.
Career Highlights
Cindy Seibel is currently employed at Ultratech Stepper, Inc., where she continues to advance her research and development efforts in semiconductor technology. Her work has been instrumental in enhancing the efficiency and performance of MOS devices.
Collaborations
Cindy collaborates with her coworker, Somit Talwar, to further explore advancements in semiconductor technologies. Their combined expertise contributes to the innovative environment at Ultratech Stepper, Inc.
Conclusion
Cindy Seibel's contributions to semiconductor technology through her innovative patent demonstrate her commitment to advancing the field. Her work not only enhances the functionality of MOS devices but also showcases the importance of innovation in technology.