Chwan-Yin Li

Title: Innovations of Chwan-Yin Li in Silicon Carbide Semiconductor Devices

Introduction

Chwan-Yin Li is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly focusing on silicon carbide devices. With a total of two patents to his name, Li's work is paving the way for advancements in electronic components.

Latest Patents

Li's latest patents include innovative designs for silicon carbide semiconductor devices. The first patent describes a trench silicon carbide metal-oxide semiconductor field effect transistor. This device features a silicon carbide semiconductor substrate and a trench that is vertically arranged and penetrates along a first horizontal direction. It includes a gate insulating layer on the inner wall of the trench, a first poly gate on the gate insulating layer, and a shield region formed outside and below the trench. Additionally, a field plate is arranged between the bottom wall of the trench and the shield region, which has semiconductor doping and is laterally in contact with a current spreading layer to deplete electrons when a reverse bias voltage is applied.

The second patent focuses on a monolithically integrated trench Metal-Oxide-Semiconductor Field-Effect Transistor combined with a segmentally surrounded trench Schottky diode. This device includes a semiconductor substrate, a trench Metal-Oxide-Semiconductor Field-Effect Transistor, and a trench Schottky diode. The trench Schottky diode features a perpendicularly disposed trench extending in a first horizontal direction, with a metal electrode filled into the trench. A plurality of doped regions is disposed segmentally around the trench, creating a Schottky junction that restricts current flow between adjacent doped regions.

Career Highlights

Chwan-Yin Li is currently employed at Shanghai Hestia Power Inc., where he continues to innovate in the semiconductor field. His work is characterized by a commitment to enhancing the efficiency and performance of electronic devices through advanced semiconductor technologies.

Collaborations

Li collaborates with talented colleagues, including Chien-Chung Hung and Kuo-Ting Chu, who contribute to the research and development efforts at their company.

Conclusion

Chwan-Yin Li's contributions to silicon carbide semiconductor devices demonstrate his expertise and innovative spirit in the field of electronics. His patents reflect a deep understanding of semiconductor technology and its applications, positioning him as a key figure in advancing this critical area