Company Filing History:
Years Active: 2002
Title: Innovations in Non-Volatile Memory Cells by Chwa Siow Lee
Introduction
Chwa Siow Lee is a prominent inventor based in Singapore, known for his contributions to the field of semiconductor technology. He has developed a significant patent that enhances the formation of non-volatile memory cells, which are crucial for modern electronic devices. His work has implications for improving memory storage efficiency and performance.
Latest Patents
Chwa Siow Lee holds a patent titled "Method to form non-volatile memory cells." This innovative method involves creating a new approach to form non-volatile memory cells with an improved bottom silicon dioxide layer of the O-N-O structure. The process begins with providing a semiconductor substrate, followed by the growth of a tunneling dielectric layer. A polysilicon layer is then deposited, and nitrogen is implanted to form a nitridized surface region. This nitridized region reduces the rate of thermal oxidation, resulting in a smoother surface. The method culminates in the formation of control gates, completing the non-volatile memory cells.
Career Highlights
Chwa Siow Lee has made significant strides in his career, particularly at Chartered Semiconductor Manufacturing Ltd. His expertise in semiconductor fabrication has positioned him as a key player in the industry. His innovative approaches have contributed to advancements in memory technology, showcasing his commitment to research and development.
Collaborations
Chwa Siow Lee has collaborated with notable colleagues, including Yung-Tao Lin and Chiew Sin Ping. These collaborations have fostered an environment of innovation and have led to the successful development of cutting-edge technologies in the semiconductor field.
Conclusion
Chwa Siow Lee's contributions to the field of non-volatile memory cells exemplify the importance of innovation in technology. His patent and collaborative efforts highlight the ongoing advancements in semiconductor manufacturing. His work continues to influence the future of memory storage solutions.