Hsinchu, Taiwan

Chunyen Chang


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:

goldMedal1 out of 832,843 
Other
 patents

Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: Innovations of Chunyen Chang

Chunyen Chang is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of electronics, particularly in the development of high electron mobility transistors. His work has implications for improving the performance and efficiency of electronic devices.

Latest Patents

Chunyen Chang holds a patent for a high electron mobility transistor. This invention includes a substrate, a superlattice structure formed on the substrate, and a transistor epitaxial structure formed on the superlattice structure. The carbon-doped AlN/GaN superlattice structure effectively reduces vertical leakage current, enhancing the epitaxial quality and breakdown voltage of the transistor. This innovation represents a significant advancement in semiconductor technology.

Career Highlights

Throughout his career, Chunyen Chang has focused on developing technologies that improve electronic components. His patent demonstrates his expertise in semiconductor design and his commitment to advancing the field. With 1 patent to his name, he has established himself as a key figure in the industry.

Collaborations

Chunyen Chang has worked alongside talented colleagues, including Zhen-Yu Li and An-Jye Tzou. Their collaborative efforts have contributed to the success of various projects and innovations in the field of electronics.

Conclusion

Chunyen Chang's contributions to the development of high electron mobility transistors highlight his innovative spirit and technical expertise. His work continues to influence the electronics industry, paving the way for future advancements.

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