Company Filing History:
Years Active: 2024
Title: Innovations of Chunxu Li in LDMOS Technology
Introduction
Chunxu Li is a notable inventor based in Wuxi, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of LDMOS devices. His innovative approach has led to advancements that enhance the performance and efficiency of these devices.
Latest Patents
Chunxu Li holds a patent for an LDMOS device and a method for preparing the same. The invention focuses on the formation of a field plate hole through the etching of an interlayer dielectric layer. The etching process is designed to stop on a blocking layer, which is strategically placed between the semiconductor base and the interlayer dielectric layer. This design incorporates at least one layer of an etch stop layer, resulting in a step-shaped distribution of hole field plates. The configuration allows for the lower ends of the hole field plates to be positioned progressively further from the drift area, optimizing the device's functionality.
Career Highlights
Chunxu Li is currently associated with CSMC Technologies Fab2 Co., Ltd., where he continues to work on innovative semiconductor solutions. His expertise in LDMOS technology has positioned him as a key player in the industry.
Collaborations
Chunxu Li collaborates with Huajun Jin, contributing to the advancement of semiconductor technologies through their combined expertise.
Conclusion
Chunxu Li's work in LDMOS technology exemplifies the impact of innovative thinking in the semiconductor industry. His patent reflects a significant advancement that could influence future developments in this field.