Suzhou, Japan

Chunhua Zhou

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Innoscience (Suzhou) Technology Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chunhua Zhou. Retrieved from https://idiyas.com/inventor/chunhua-zhou-clqcdbs8

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: The Innovations of Chunhua Zhou

Introduction

Chunhua Zhou is a notable inventor based in Suzhou, Japan. He has made significant contributions to the field of semiconductor technology. His work focuses on the development of nitride-based semiconductor devices, which are crucial for various electronic applications.

Latest Patents

Chunhua Zhou holds a patent for a nitride-based semiconductor device and the method for manufacturing the same. This innovative device includes a first nitride-based semiconductor layer, a nitride-based multiple semiconductor layer, a gate electrode, a gate insulator layer, and a source electrode. The first nitride-based semiconductor layer features a drift region and at least two doped barrier regions that define an aperture in the drift region. The nitride-based multiple semiconductor layer structure is positioned over the first layer and contains a first heterojunction and a second heterojunction, which are separated from each other. The gate electrode is integrated into the nitride-based multiple semiconductor layer structure and aligns vertically with the aperture in the drift region. The gate insulator layer is situated between the nitride-based multiple semiconductor layer structure and the gate electrode, while the source electrode is placed over the first nitride-based semiconductor layer and contacts the first and second heterojunctions of the nitride-based multiple semiconductor layer structure.

Career Highlights

Chunhua Zhou is currently employed at Innoscience (Suzhou) Technology Co., Ltd. His work at this company has allowed him to further his research and development in semiconductor technologies. He has demonstrated a strong commitment to innovation and excellence in his field.

Collaborations

Chunhua Zhou collaborates with talented individuals such as Chao Yang and Qiyue Zhao. These partnerships enhance the research and development efforts at Innoscience and contribute to the advancement of semiconductor technology.

Conclusion

Chunhua Zhou is a prominent inventor whose work in nitride-based semiconductor devices has made a significant impact in the field. His innovative patent and collaborations with skilled colleagues highlight his dedication to advancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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