Suwon, South Korea

Chung Woo Kim

This inventor holds 2 USPTO granted patents. Top assignees: Samsung Electronics Co., Ltd., Cornell University, Seoul National University. Active years: 2009-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chung Woo Kim. Retrieved from https://idiyas.com/inventor/chung-woo-kim-1edmgj7b

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.7

ph-index = 2

Forward Citations = 5(Granted Patents)


Location History:

  • Gyeonggi-do, KR (2009)
  • Suwon-si, KR (2013)

Company Filing History:


Years Active: 2009-2013

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2 patents (USPTO):Explore Patents

Title: The Innovative Mind of Chung Woo Kim

Introduction

Chung Woo Kim is a prominent inventor based in Suwon-si, South Korea, who has made significant contributions to the field of mechanical devices and memory technology. With two patents to his name, he has focused his research on innovative solutions that enhance the functionality and efficiency of memory devices.

Latest Patents

One of Chung Woo Kim's latest patents is centered around a shape memory device. This mechanical device features bistable positions, allowing it to function as both switches and memory devices. The device can be actuated to different positions and coupled to a transistor in various configurations, thus providing versatile memory options. The actuation mechanisms for this device include electrostatic methods and heat, and in one instance, it serves as a gate for a field-effect transistor. Moreover, the design includes actuatable switches positioned at intersections of conductive rows and columns, making each intersection independently addressable.

Another patent developed by Kim pertains to charge trap memory with an avalanche generation inducing layer. This invention introduces a charge trap flash memory cell that utilizes multi-doped layers within the active region, which differentiates it from conventional designs. The inventive approach promotes band-to-band tunneling at the PN junction, enhancing the performance of the memory cell by accelerating electrons through reverse bias conditions to generate an avalanche phenomenon. The operational method for memory arrays includes programming and erasing processes that utilize holes and electrons effectively.

Career Highlights

Chung Woo Kim has garnered experience from notable institutions and companies, including Samsung Electronics Co., Ltd. and Seoul National University. His tenure at these organizations has provided him with invaluable exposure to cutting-edge research and development in technology.

Collaborations

Throughout his career, Kim has had the opportunity to collaborate with esteemed colleagues, including Jae Sung Sim and Byung Gook Park. These collaborations have further enriched his work, allowing for the sharing of knowledge and innovation in their respective fields.

Conclusion

Chung Woo Kim stands out as a dedicated inventor whose innovative work has the potential to reshape the landscape of memory technology. His patents reflect a deep understanding of mechanical devices and memory systems, showcasing his commitment to pushing the boundaries of technology. As he continues to develop his ideas, his contributions will undoubtedly inspire future advancements in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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