This inventor holds 1 USPTO granted patent. Top assignee: Industrial Technology Research Institute. Active years: 1999.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1999
Title: Innovations of Chung-Hsing Chao in Vacuum Technology.
Introduction
Chung-Hsing Chao is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of vacuum technology, particularly through his innovative patent that addresses the challenges of sealing ultra-high vacuum devices.
Latest Patents
Chao holds a patent titled "Seal for vacuum devices and methods for making same." This invention presents a method for permanently sealing an ultra-high vacuum within a glass enclosure. The process begins with forming a hole in one of the flat plates or standoffs of the enclosure. A metal tube is then sealed to the glass, either positioned partly inside the hole or with a flange covering it. A glass frit paste is applied around the glass-metal interface, followed by heating to create a glass-to-metal seal. Once cooled, the metal tube serves as a pumping port to evacuate the enclosure, which is then pinched off to form a permanent seal. This innovative approach enhances the reliability and efficiency of vacuum devices.
Career Highlights
Chung-Hsing Chao is affiliated with the Industrial Technology Research Institute, where he has been instrumental in advancing research and development in vacuum technology. His work has not only contributed to the field but has also positioned him as a key figure in the industry.
Collaborations
Chao has collaborated with notable colleagues, including Kuang-Lung Tsai and Wei-Chiang Chen. Their combined expertise has fostered a productive research environment, leading to advancements in vacuum technology.
Conclusion
Chung-Hsing Chao's innovative contributions to vacuum technology, particularly through his patented methods, demonstrate his commitment to enhancing the efficiency and reliability of vacuum devices. His work continues to influence the field and inspire future innovations.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
