Chun-Wai Ng

Title: The Innovations of Chun-Wai Ng

Introduction

Chun-Wai Ng is a notable inventor based in Kowloon, China. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to device manufacturing.

Latest Patents

Ng's latest patents include a MOS-driven semiconductor device and a method for manufacturing this device. The invention involves a mask used to form an nsource layer, which is created by a nitride film on the surface of a substrate before a trench is formed. This process ensures a sufficient width of the nsource layer on the substrate's surface, leading to stable contact between the nsource layer and a source electrode. Additionally, a CVD oxide film, serving as an interlayer insulating film, is formed on doped poly-silicon to be used as a gate electrode embedded in the trench. Non-doped poly-silicon, which is not oxidized, is then formed on the CVD oxide film. This method effectively suppresses the generation of voids in the CVD oxide film, facilitating the easy manufacturing of semiconductor apparatuses.

Career Highlights

Chun-Wai Ng is currently employed at Fuji Electric Co., Ltd., where he continues to develop innovative technologies in the semiconductor industry. His work has contributed to advancements in device efficiency and reliability.

Collaborations

Ng has collaborated with notable colleagues, including Kin-On Sin and Hitoshi Sumida, enhancing the innovative efforts within his team.

Conclusion

Chun-Wai Ng's contributions to semiconductor technology through his patents and collaborative efforts highlight his role as a key innovator in the field. His work continues to influence the development of advanced semiconductor devices.