Tainan, Taiwan

Chun Jen Huang


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 2008

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Chun Jen Huang

Introduction

Chun Jen Huang is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of memory technology, particularly in the development of multi-level cell memory arrays. His innovative approach has led to advancements that enhance the efficiency and performance of memory storage solutions.

Latest Patents

Chun Jen Huang holds a patent for a "Method for programming multi-level cell memory array." This method involves operating a charge-trapping multi-level cell (MLC) memory array by programming a first plurality of charge-trapping sites to a preliminary first-level value, a second plurality to a preliminary second-level value, and a third plurality to a final third-level value using a first programming scheme. Subsequently, the first and second plurality of charge-trapping sites are programmed to their final values using a second programming scheme. This innovative method has the potential to improve the functionality of memory devices.

Career Highlights

Chun Jen Huang is currently employed at Macronix International Co., Ltd., a company known for its advancements in non-volatile memory solutions. His work at Macronix has allowed him to collaborate with other talented professionals in the field, contributing to the company's reputation for innovation.

Collaborations

Chun Jen Huang has worked alongside colleagues such as Chung Kuang Chen and Hsin Yi Ho, who have also contributed to the advancements in memory technology. Their collaborative efforts have fostered an environment of innovation and creativity within their projects.

Conclusion

Chun Jen Huang's contributions to the field of memory technology, particularly through his patented methods, highlight his role as an influential inventor. His work continues to impact the industry positively, paving the way for future advancements in memory storage solutions.

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