Company Filing History:
Years Active: 2021-2022
Title: Innovations of Chun-Hsu Chang
Introduction
Chun-Hsu Chang is a notable inventor based in Hsinchu County, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of trench gate MOSFETs. With a total of 2 patents to his name, his work continues to influence advancements in electronic devices.
Latest Patents
One of Chun-Hsu Chang's latest patents is focused on a method of forming a trench gate MOSFET. This innovative method involves the formation of a hard mask layer on a substrate, followed by the partial removal of the substrate to create a trench. In the lower portion of the trench, a first insulating layer and a first conductive layer are established. A sacrificial layer is then formed on the side surface of the upper portion of the trench, connecting to the hard mask layer. An interlayer insulating layer is created on the first conductive layer through a thermal oxidation process while the sacrificial and hard mask layers are present. Finally, a second insulating layer and a second conductive layer are formed in the upper portion of the trench, culminating in the development of a trench gate MOSFET.
Career Highlights
Chun-Hsu Chang is currently employed at Upi Semiconductor Corporation, where he continues to innovate in the semiconductor industry. His work has been instrumental in enhancing the performance and efficiency of electronic components.
Collaborations
Chun-Hsu Chang has collaborated with notable colleagues such as Nobuyuki Shirai and Ming-Hung Chou. Their combined expertise contributes to the advancement of semiconductor technologies.
Conclusion
Chun-Hsu Chang's contributions to the field of semiconductor technology, particularly through his innovative patents, highlight his role as a significant inventor. His work continues to pave the way for advancements in electronic devices and systems.