Hsinchu, Taiwan

Chun-Hsien Wu

This inventor holds 2 USPTO granted patents. Top assignees: Faraday Technology Corporation, Realtek Semiconductor Inc.. Active years: 2009-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chun-Hsien Wu. Retrieved from https://idiyas.com/inventor/chun-hsien-wu-lwpgolpk

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2009-2026

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2 patents (USPTO):Explore Patents

Title: The Innovations of Chun-Hsien Wu

Introduction: Chun-Hsien Wu is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of memory technology, particularly through his innovative patent related to built-in self-repair circuits.

Latest Patents: Chun-Hsien Wu holds a patent for a built-in self-repair (BISR) circuit for a multi-port memory and the method thereof. This invention includes a test-and-analysis module (TAM) and a defect locating module (DLM) that work together to identify and repair faults in multi-port memory systems. The TAM tests the memory to generate fault locations and determines if a port-specific fault candidate is present. If such a candidate is identified, the DLM generates a defect location, allowing the TAM to devise a repair strategy. If no candidate is found, the TAM still determines how to repair the memory based on the fault location.

Career Highlights: Chun-Hsien Wu is currently employed at Faraday Technology Corporation, where he continues to advance his research and development efforts in memory technology. His work has been instrumental in enhancing the reliability and efficiency of memory systems.

Collaborations: Some of his notable coworkers include Tsu-Wei Tseng and Yu-Jen Huang, who contribute to the innovative environment at Faraday Technology Corporation.

Conclusion: Chun-Hsien Wu's contributions to the field of memory technology through his patent demonstrate his commitment to innovation and problem-solving in electronics. His work continues to influence advancements in multi-port memory systems.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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