Suwon, South Korea

Chull-Soo Kim


Average Co-Inventor Count = 5.7

ph-index = 6

Forward Citations = 193(Granted Patents)


Company Filing History:


Years Active: 1996-2002

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6 patents (USPTO):Explore Patents

Title: Chull-Soo Kim: Innovator in Dynamic Random Access Memory Technology

Introduction

Chull-Soo Kim is a prominent inventor based in Suwon, South Korea. He has made significant contributions to the field of semiconductor memory technology, particularly in dynamic random access memory (DRAM) devices. With a total of six patents to his name, Kim's work has had a substantial impact on the efficiency and performance of memory systems.

Latest Patents

Among his latest patents is a multi-bank dynamic random access memory device that features all bank precharge capability. This innovative synchronous DRAM is designed to access data in a memory cell array in synchronism with an external system clock, such as that from a central processing unit (CPU). The device includes multiple memory banks, each containing numerous memory cells that can operate in either an active cycle or a precharge cycle. The patent outlines a circuit that receives a row address strobe signal, latches its logic level in response to the clock, and manages the activation and inactivation of memory banks based on the received address.

Another notable patent involves a circuit in a semiconductor memory for programming operation modes of the synchronous DRAM. This invention also emphasizes the ability to access data in synchronism with an external clock and includes similar features to the previously mentioned patent, enhancing the operational efficiency of memory banks.

Career Highlights

Chull-Soo Kim is currently employed at Samsung Electronics Co., Ltd., a leading global technology company. His work at Samsung has allowed him to be at the forefront of memory technology innovations. His contributions have not only advanced the capabilities of DRAM but have also positioned Samsung as a key player in the semiconductor industry.

Collaborations

Throughout his career, Kim has collaborated with talented individuals such as Hyun-Soon Jang and Churoo Park. These collaborations have fostered an environment of innovation and creativity, leading to the development of groundbreaking technologies in the field of memory devices.

Conclusion

Chull-Soo Kim's contributions to dynamic random access memory technology exemplify the spirit of innovation in the semiconductor industry. His patents reflect a deep understanding of memory systems and their operational efficiencies. As he continues to work at Samsung Electronics, his impact on technology will undoubtedly grow, influencing future advancements in memory technology.

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