Seongnam-si, South Korea

Chul-Jin Hwang

USPTO Granted Patents = 4 

Average Co-Inventor Count = 3.0

ph-index = 3

Forward Citations = 100(Granted Patents)


Company Filing History:


Years Active: 2016-2018

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4 patents (USPTO):Explore Patents

Title: Chul-Jin Hwang: Innovator in Non-Volatile Memory Technology

Introduction

Chul-Jin Hwang is a prominent inventor based in Seongnam-si, South Korea. He has made significant contributions to the field of non-volatile memory devices, holding a total of 4 patents. His work is instrumental in advancing memory technology, particularly in the design and functionality of memory devices.

Latest Patents

Hwang's latest patents include a non-volatile memory device featuring a first gate structure in the memory cell region and a second gate structure in the peripheral circuit region. This innovative design enhances the efficiency and performance of memory devices. Another notable patent describes a non-volatile memory device that comprises a substrate, a memory cell array, bonding pads, and a pad circuit. This configuration allows for improved electrical connectivity between the memory device and external devices.

Career Highlights

Chul-Jin Hwang is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has positioned him as a key player in the development of advanced memory solutions. Hwang's expertise in semiconductor technology has been pivotal in driving innovation within the company.

Collaborations

Hwang has collaborated with notable colleagues, including Pansuk Kwak and Younghwan Ryu. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and technological advancements.

Conclusion

Chul-Jin Hwang's contributions to non-volatile memory technology exemplify his innovative spirit and dedication to advancing the field. His patents reflect a commitment to enhancing memory device performance, making him a significant figure in the technology landscape.

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