Chuhua Feng

Title: Chuhua Feng: Innovator in Flash-Memory Technology

Introduction

Chuhua Feng is a notable inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in the area of flash-memory control circuits. His innovative approach has led to advancements that enhance the efficiency of data reading processes.

Latest Patents

Chuhua Feng holds a patent for a "Flash-memory low-speed read mode control circuit." This invention discloses a control circuit that includes a charge pump, a first voltage division circuit made up of two resistors and a first switch, and a second voltage division circuit composed of two capacitors. The first switch facilitates the transition between the low-speed read mode and the charge pump electric-leakage mode. In the data read mode, a feedback mechanism ensures that the output voltage of the charge pump remains stable and proportional to the first component voltage. This innovation significantly reduces the average current during the low-speed read mode, thereby minimizing power consumption.

Career Highlights

Chuhua Feng is currently employed at Shanghai Huahong Grace Semiconductor Manufacturing Corporation. His work at this esteemed company has allowed him to focus on developing cutting-edge technologies in semiconductor manufacturing. His expertise in flash-memory technology has positioned him as a key player in the industry.

Collaborations

Chuhua Feng collaborates with Guangjun Yang, a fellow innovator in the field. Their partnership has fostered a creative environment that encourages the development of new technologies and solutions.

Conclusion

Chuhua Feng's contributions to flash-memory technology exemplify the spirit of innovation. His patent for a low-speed read mode control circuit showcases his ability to address critical challenges in semiconductor efficiency. Through his work, he continues to influence the future of technology in significant ways.