This inventor holds 1 USPTO granted patent. Top assignee: Shanghai Huali Microelectronics Corporation. Active years: 2014.
Company Filing History:
Years Active: 2014
Title: Chuanmin Zhang: Innovator in Semiconductor Fabrication
Introduction
Chuanmin Zhang is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor fabrication, particularly in improving surface planarity during the chemical mechanical polishing process.
Latest Patents
Chuanmin Zhang holds a patent for a fabrication method aimed at enhancing surface planarity after tungsten chemical mechanical polishing. This innovative method involves forming contact holes and dummy patterns through two distinct photolithography-and-etching processes. The depth of the dummy patterns is intentionally kept smaller than that of the contact holes. Tungsten is then filled into both the contact holes and dummy patterns, followed by the removal of excess tungsten using a W-CMP process. This technique effectively reduces the wiring density differences between areas, leading to improved surface planarity of the contact hole layer. Additionally, the controlled depth of the dummy patterns ensures that the tungsten does not interfere with the device area beneath the pre-metal dielectric layer, thereby preserving device performance.
Career Highlights
Chuanmin Zhang is currently employed at Shanghai Huali Microelectronics Corporation, where he continues to advance semiconductor technologies. His work has been instrumental in enhancing the efficiency and effectiveness of semiconductor manufacturing processes.
Collaborations
Chuanmin collaborates with notable colleagues, including Jingxun Fang and Wei Zuo, who contribute to his innovative projects and research endeavors.
Conclusion
Chuanmin Zhang's contributions to semiconductor fabrication, particularly through his patented methods, highlight his role as a key innovator in the industry. His work not only improves manufacturing processes but also enhances the performance of semiconductor devices.