Company Filing History:
Years Active: 2014
Title: Innovations of Christopher M Prindle
Introduction
Christopher M Prindle is a notable inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the development of high-k metal gate structures. With a total of 2 patents, Prindle's work has advanced the efficiency and reliability of electronic devices.
Latest Patents
Prindle's latest patents include a replacement gate approach for high-k metal gate stacks. This innovative method utilizes a multi-layer contact level, where the dielectric material for encapsulating gate electrode structures is provided in two forms. The first interlayer dielectric material offers superior gap-filling capabilities, while the second provides high etch resistivity and robustness during the planarization process. This approach minimizes material erosion during the replacement of placeholder materials, leading to reduced yield loss and improved device uniformity. Another significant patent involves the formation of high-k metal gate electrode structures by removing the work function on sidewalls in replacement gate technology. This enhancement improves fill conditions when using highly conductive electrode metals, such as aluminum, by preserving a well-defined bottom layer.
Career Highlights
Christopher M Prindle is currently employed at Globalfoundries Inc., where he continues to innovate in semiconductor manufacturing. His expertise in high-k metal gate technology has positioned him as a key player in the industry.
Collaborations
Prindle has collaborated with notable colleagues, including Johannes F Groschopf and Andreas Ott, contributing to advancements in semiconductor technology.
Conclusion
Christopher M Prindle's contributions to the field of semiconductor technology through his innovative patents and collaborations highlight his importance as an inventor. His work continues to influence the development of more efficient electronic devices.