Globalfoundries Inc.

Christopher M Prindle

Rolf Stephan

Klaus Hempel

Andreas Ott

Johannes F Groschopf

In a replacement gate approach, the dielectric material for laterally encapsulating the gate electrode structures may be provided in the form of a first interlayer dielectric material having superior gap filling capabilities and a second interlayer dielectric material that provides high etch resistivity and robustness during a planarization process. In this manner, undue material erosion upon replacing the placeholder material may be avoided, which results in reduced yield loss and superior device uniformity.

Replacement gate approach for high-k metal gate stacks by using a multi-layer contact level

When forming sophisticated high-k metal gate electrode structures on the basis of a replacement gate approach, the fill conditions upon filling in the highly conductive electrode metal, such as aluminum, may be enhanced by removing the final work function metal, for instance a titanium nitride material in P-channel transistors, only preserving a well-defined bottom layer.

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Dresden, Germany

Christopher M Prindle