Centerville, MN, United States of America

Christopher David Sonnek


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: The Innovations of Christopher David Sonnek

Introduction

Christopher David Sonnek is an accomplished inventor based in Centerville, MN (US). He has made significant contributions to the field of memory technology, particularly through his innovative patent. His work is characterized by a deep understanding of memory cell access times and the associated delays.

Latest Patents

Sonnek holds a patent titled "Adjusting access times to memory cells based on characterized word-line delay and gate delay." This invention involves a memory tracking circuit that activates a reset signal to switch the memory from an access state to a recess state. The activation is based on signals received after a propagation delay and those applied to a transistor-based gate delay. In fast PVT conditions, the gate delay is shorter than the propagation delay, prompting a slow-down circuit to delay the reset signal activation. Conversely, in slow PVT conditions, the circuit does not delay the reset signal to prevent excess access margin. This innovative approach enhances the efficiency of memory access.

Career Highlights

Christopher Sonnek is currently employed at LSI Corporation, where he continues to develop cutting-edge technologies. His work at LSI Corporation has positioned him as a key player in the advancement of memory technology.

Collaborations

Throughout his career, Sonnek has collaborated with notable colleagues, including Donald Albert Evans and Rasoju Veerabadra Chary. These collaborations have fostered an environment of innovation and creativity, contributing to the success of their projects.

Conclusion

Christopher David Sonnek's contributions to memory technology through his patent and work at LSI Corporation highlight his role as a significant inventor in the field. His innovative approaches continue to influence advancements in memory access technologies.

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