East Sussex, United Kingdom

Christopher Burgess


Average Co-Inventor Count = 2.6

ph-index = 4

Forward Citations = 54(Granted Patents)


Location History:

  • Hove, GB (2004 - 2006)
  • East Sussex, GB (2010 - 2012)
  • East Essex, GB (2012)

Company Filing History:


Years Active: 2004-2012

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6 patents (USPTO):Explore Patents

Title: Inventor Spotlight: Christopher Burgess

Introduction

Christopher Burgess is a notable inventor based in East Sussex, Great Britain. He has made significant contributions to the field of ion sources, holding a total of six patents that demonstrate his innovative approach to technology. His latest inventions cater to the needs of the semiconductor industry, particularly in ion implantation processes.

Latest Patents

Among Christopher Burgess's notable patents are two advancements related to ion sources. The first patent, titled "Cathode and counter-cathode arrangement in an ion source," details an innovative arrangement designed for ion implanters. This invention focuses on creating high-efficiency ion sources that operate under vacuum, utilizing a plasma generated within an arc chamber to produce ions for semiconductor wafer implantation. The arrangement includes a unique cathode that emits electrons and specific voltage potential sources that allow for the switching of electrode functionalities between acting as an anode or a counter-cathode.

Another of his recent patents is for a "Front plate for an ion source." This innovative design features a front plate that incorporates an exit aperture for ions along with a specifically slanted slot that enhances functionality while obstructing direct line of sight into the ion source. This design effectively provides both an expansion gap and improved operational safety for ion implanters.

Career Highlights

Christopher Burgess is associated with Applied Materials, Inc., a leading company in the field of materials engineering and semiconductor manufacturing. His role at the company has allowed him to further explore and develop his inventions, ensuring that they meet the stringent demands of the industry.

Collaborations

Throughout his career, Christopher has collaborated with talented individuals such as Richard David Goldberg and David George Armour. These partnerships have likely enriched his innovative processes, leading to the creation of advanced technologies in the field of ion implantation.

Conclusion

Christopher Burgess exemplifies the spirit of innovation in semiconductor technology with his insightful contributions to ion source design. His patents not only showcase his inventive prowess but also enhance the efficiency and safety of ion implantation processes used in semiconductor manufacturing. The advancements that he continues to pursue at Applied Materials, Inc. position him as a key figure in the ongoing evolution of this critical field.

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