The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7709817 B1

PDF
Full Text
Expired
Date of Patent:
May. 04, 2010

Filed:

Jun. 04, 2007
Applicants:

Christopher Burgess, East Sussex, GB;

Martin Keane, East Sussex, GB;

Inventors:

Christopher Burgess, East Sussex, GB;

Martin Keane, East Sussex, GB;

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G21K 5/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of tuning an ion beam in an ion implanter relative to, e.g., ion beam current, energy, size and shape, includes retrieving a set of parameters associated with operation of the ion implanter, at least some of which are stored in a dynamic database, configuring the ion implanter according to the retrieved set of parameters, to thereby provide an ion beam, optimizing the ion beam by varying one or more of the parameters, and updating the parameters stored in the dynamic database which changed during optimization.


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Burgess, Christopher. (2010). Ion beams in an ion implanter (U.S. Patent No. 7709817). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7709817

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