Company Filing History:
Years Active: 2012-2016
Title: Innovations in Atomic Layer Deposition: The Contributions of Ching-Shun Ku
Introduction: Ching-Shun Ku is a notable inventor based in Kaohsiung, Taiwan. With a focus on advancing deposition techniques in materials science, he holds two patents that reflect his innovative approach to atomic layer deposition. His work has significant implications for the growth of thin films, contributing to developments in various technological fields.
Latest Patents: Ku's most recent patents include a "Method for Atomic Layer Deposition," which involves a systematic process of preparing a film on a substrate through controlled cycles. This method enhances the uniformity and area size of doping films while minimizing the need for high-temperature annealing processes. His second patent, "Method of Thin Film Epitaxial Growth Using Atomic Layer Deposition," describes a technique that allows for the controlled growth of thin films by maintaining thermal equilibrium and constant pressure within a chamber, significantly reducing precursor consumption while ensuring effective deposition.
Career Highlights: Ching-Shun Ku is currently affiliated with the National Synchrotron Radiation Research Center, where he applies his expertise in material science and nanotechnology. His research contributes to the advancement of techniques essential for creating high-quality thin films that are foundational in various applications across electronics and optoelectronics.
Collaborations: Throughout his career, Ku has collaborated with fellow researcher Hsin-Yi Lee. Together, they work on enhancing atomic layer deposition processes and exploring new avenues for research, demonstrating a productive partnership in the scientific community.
Conclusion: With his innovative patents and ongoing research at the National Synchrotron Radiation Research Center, Ching-Shun Ku continues to lead advancements in atomic layer deposition. His contributions not only enhance the scientific understanding of material growth but also pave the way for future innovations in technology.