The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Jun. 04, 2012
Ching-shun Ku, Kaohsiung, TW;
Hsin-yi Lee, Hsinchu County, TW;
Ching-Shun Ku, Kaohsiung, TW;
Hsin-Yi Lee, Hsinchu County, TW;
National Synchrotron Radiation Research Center, Hsin-Chu, TW;
Abstract
A method for atomic layer deposition includes providing a substrate in a reaction chamber; and performing at least one atomic layer deposition cycle to form a film on a surface of the substrate. The atomic layer deposition cycle includes passing first precursors into the reaction chamber to let first atoms included in the first precursors combine with reaction sites of the substrate; and passing second precursors into the reaction chamber to let second atoms included in the second precursors combine with the reaction sites uncombined with the first atoms or substitute at least part of the first atoms to combine with the reaction sites of the substrate. The above-mentioned method for atomic layer deposition is capable of preparing large area and uniformity of doping film without annealing process or with low temperature annealing process.