San Jose, CA, United States of America

Ching-Shi Jenq


Average Co-Inventor Count = 1.1

ph-index = 4

Forward Citations = 122(Granted Patents)


Company Filing History:


Years Active: 1991-1994

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4 patents (USPTO):Explore Patents

Title: Innovations of Ching-Shi Jenq

Introduction

Ching-Shi Jenq is a notable inventor based in San Jose, CA (US). He has made significant contributions to the field of memory technology, holding a total of 4 patents. His work focuses on advancements in electrically programmable and erasable memory devices.

Latest Patents

One of his latest patents is for a floating gate memory array with latches having improved immunity. This invention features an electrically programmable and erasable floating gate memory device that consists of two substantially identical sections. Each section includes a plurality of column address lines, row lines, and source lines. The design allows for efficient data storage and retrieval through the use of bit latches associated with each section.

Another significant patent involves a method of making a single transistor non-volatile electrically alterable memory cell. This invention utilizes a substrate of semiconductor material and incorporates a re-crystallized floating gate to maximize capacitive coupling. The design also includes a control gate with two electrically connected sections, enhancing the functionality of the memory cell.

Career Highlights

Ching-Shi Jenq has been instrumental in the development of innovative memory technologies at Silicon Storage Technology, Inc. His expertise in the field has led to advancements that improve the performance and reliability of memory devices.

Collaborations

Ching-Shi has collaborated with Ping Wang, a talented coworker who has contributed to the success of their projects. Together, they have worked on various innovations that push the boundaries of memory technology.

Conclusion

Ching-Shi Jenq's contributions to the field of memory technology are noteworthy. His patents reflect a commitment to innovation and excellence in the development of advanced memory devices.

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