This inventor holds 1 USPTO granted patent. Top assignee: Industrial Technology Research Institute. Active years: 2009.
Company Filing History:
Years Active: 2009
Title: Innovations of Ching-Sheng Lin in Memory Technology
Introduction
Ching-Sheng Lin is a notable inventor based in Tainan County, Taiwan. He has made significant contributions to the field of memory technology, particularly through his innovative patent that enhances the performance of memory cells.
Latest Patents
Ching-Sheng Lin holds a patent titled "Memory and multi-state sense amplifier thereof." This invention provides a multi-state sense amplifier that is coupled to at least one memory cell and a plurality of reference cells. The design includes a source follower that clamps the voltage drop across the memory cell, generating a memory cell current. Additionally, the source follower circuit is connected to multiple second nodes and the output terminals of the reference cells, which helps in generating reference currents. The current mirror circuit duplicates the memory cell current to affect the reference currents, ultimately producing a memory cell voltage and a set of reference voltages.
Career Highlights
Ching-Sheng Lin is associated with the Industrial Technology Research Institute, where he continues to work on advancing technology in the field of memory systems. His innovative approach has led to the development of solutions that improve the efficiency and functionality of memory devices.
Collaborations
Ching-Sheng Lin collaborates with talented individuals such as Min-Chuan Wang and Chia-Pao Chang, who contribute to the research and development efforts in their projects.
Conclusion
Ching-Sheng Lin's work in memory technology exemplifies the impact of innovative thinking in advancing electronic systems. His contributions are vital for the ongoing evolution of memory technology, showcasing the importance of collaboration and creativity in the field.