Ching Feng Lee

Title: Innovations of Ching Feng Lee in Semiconductor Technology

Introduction

Ching Feng Lee is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on enhancing the performance and reliability of semiconductor devices.

Latest Patents

One of his latest patents is titled "Passivation layer for a semiconductor device and method for manufacturing the same." This invention involves a semiconductor device that includes an ultra-thick metal (UTM) structure. The device features a passivation layer that comprises a first passivation oxide, which includes an unbias film and a first bias film. The unbias film is positioned on portions of the UTM structure and on portions of the layer on which the UTM structure is formed. The first bias film is placed on the unbias film. Additionally, the passivation layer includes a second passivation oxide consisting of a second bias film, which is situated on the first bias film. Furthermore, the passivation layer contains a third passivation oxide consisting of a third bias film, which is located on the second bias film.

Career Highlights

Ching Feng Lee is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His innovative work has contributed to advancements in semiconductor manufacturing processes and device performance.

Collaborations

He collaborates with talented coworkers, including Li Chun Liu and Chun Tang Wang, who contribute to the innovative environment at their workplace.

Conclusion

Ching Feng Lee's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in semiconductor devices and manufacturing methods.