Ching-Cheng Hsieh

Title: Innovations of Ching-Cheng Hsieh

Introduction

Ching-Cheng Hsieh is a notable inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approaches to manufacturing processes.

Latest Patents

One of his latest patents is the "Few-particle-induced low-pressure TEOS process." This invention involves arranging multiple semiconductor substrates on a boat and transferring them into a TEOS reactor. Silicon oxide films are deposited on the substrates through a low-pressure TEOS process. An annealing process is then performed by injecting oxygen gas into the reactor, solidifying the oxide films on the corners of the boat's flanges before the substrates exit the reactor.

Another significant patent is the "Method of LPCVD silicon nitride deposition." This method aims to decrease particle contamination during the deposition of silicon nitride layers on semiconductor substrates. The process includes forming a silicon nitride layer using LPCVD, followed by a low gas flow rate purging step and a cycle purging step executed sequentially. The key innovation here is the gradual input of nitrogen gas, which reduces the gas flow rate during purging, thereby avoiding contamination issues associated with conventional methods.

Career Highlights

Ching-Cheng Hsieh is currently employed at Mosel Vitelic Corporation, where he continues to develop and refine semiconductor manufacturing processes. His work has been instrumental in advancing the efficiency and quality of semiconductor production.

Collaborations

Ching-Cheng has collaborated with notable colleagues, including Pei-Feng Sun and May-Jane Chen, who contribute to the innovative environment at Mosel Vitelic Corporation.

Conclusion

Ching-Cheng Hsieh's contributions to semiconductor technology through his patents reflect his commitment to innovation and excellence in the field. His work continues to influence the industry positively.