Location History:
- Temecula, CA (US) (2009 - 2010)
- Corvallis, OR (US) (2013)
Company Filing History:
Years Active: 2009-2013
Title: Chin Dixie Huang: Innovator in Semiconductor Technology
Introduction
Chin Dixie Huang is a notable inventor based in Corvallis, OR (US). He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing the performance and efficiency of transistor devices.
Latest Patents
One of his latest patents is for a "Single Finger Gate Transistor." This invention includes a transistor device that features a lightly doped layer of semiconductor material of a first type and a body region of semiconductor material of a second type. A source region of the first type is formed in the body region, which is more doped than the lightly doped layer. Additionally, a drain region of the first type is formed in the lightly doped layer, also more doped than the lightly doped layer. A drift region of the lightly doped layer is provided between the body region and the drain region, with a gate electrode surrounding the drain region. This configuration allows the gate electrode to control the electric field in the drift region, enhancing the avalanche breakdown of the drain region.
Another significant patent is for "Creating High Voltage FETs with Low Voltage Process." This integrated circuit (IC) includes a high voltage first-conductivity type field effect transistor (HV-first-conductivity FET) and a high voltage second-type field effect transistor (HV-second-conductivity FET). The HV first-conductivity FET features a second-conductivity-well and a field oxide that defines an active area. A first-conductivity-well is formed in the active area, enabling it to operate as a first-conductivity-drift portion of the HV-first-conductivity FET. The HV second-conductivity FET also has a first-conductivity-well and a field oxide, with a channel stop region that allows it to function as second-conductivity-drift portions of the HV-second-conductivity FET.
Career Highlights
Chin Dixie Huang is currently employed at Hewlett-Packard Development Company, L.P. His work at this esteemed organization has allowed him to further his research and development in semiconductor technologies.
Collaborations
He has collaborated with notable coworkers such as Jeff Hintzman and James Weaver, contributing to various projects and innovations in the field.
Conclusion