The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2013
Filed:
Oct. 26, 2005
Chin Dixie Huang, Corvallis, OR (US);
Jeffrey A. Hintzman, Corvallis, OR (US);
Dennis James Schloeman, Corvallis, OR (US);
Hang Liao, Corvallis, OR (US);
Chin Dixie Huang, Corvallis, OR (US);
Jeffrey A. Hintzman, Corvallis, OR (US);
Dennis James Schloeman, Corvallis, OR (US);
Hang Liao, Corvallis, OR (US);
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Abstract
A transistor device includes a lightly doped layer of semiconductor material of a first type and a body region of semiconductor material of a second type. A source region of the first type is formed in the body region, the source region being more doped than the lightly doped layer. A drain region of the first type is formed in the lightly doped layer, the drain region being more doped than the lightly doped layer. A drift region of the lightly doped layer is further provided disposed between the body region and the drain region. Additionally, a gate electrode is provided surrounding the drain region. The gate electrode is partially disposed over a thin oxide and partially over a thick oxide, wherein the gate electrode extended over the thick oxide from the thin oxide controls the electric field in the drift region to increase the avalanche breakdown of the drain region.