Company Filing History:
Years Active: 2004-2007
Title: Chih-Yuan Hsiao: Innovator in Memory Device Technology
Introduction
Chih-Yuan Hsiao is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of memory device technology, holding a total of 5 patents. His innovative work focuses on enhancing the performance and efficiency of memory devices.
Latest Patents
One of Hsiao's latest patents is titled "Memory device with vertical transistors and deep trench capacitors and method of fabricating the same." This invention features a memory device that includes a substrate containing at least one deep trench, with a capacitor deposited in the lower portion of the trench. The design incorporates a conducting structure with a first and second conductive layer, along with a ring-shaped insulator that enhances the device's functionality. A diffusion barrier is also included to improve the device's performance, showcasing Hsiao's expertise in advanced memory technology.
Career Highlights
Chih-Yuan Hsiao is currently employed at Nan Ya Technology Corporation, where he continues to develop cutting-edge memory solutions. His work has positioned him as a key figure in the industry, contributing to advancements that benefit various applications in technology.
Collaborations
Hsiao collaborates with talented coworkers, including Yi-Nan Chen and Hui-Min Mao, who contribute to the innovative environment at Nan Ya Technology Corporation. Their teamwork fosters creativity and drives the development of new technologies.
Conclusion
Chih-Yuan Hsiao's contributions to memory device technology exemplify his dedication to innovation and excellence. His patents reflect a commitment to advancing the field, making him a notable inventor in the industry.