The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2005
Filed:
Nov. 26, 2003
Chih-yuan Hsiao, Taipei, TW;
Yi-nan Chen, Taipei, TW;
Chih-Yuan Hsiao, Taipei, TW;
Yi-Nan Chen, Taipei, TW;
Nanya Technology Corporation, Taoyuan, TW;
Abstract
A method of forming a memory cell with a single sided buried strap. A collar oxide layer is formed on the sidewall of a trench. A conductive layer fills the trench. The conductive layer and the collar oxide layer are partially removed to form an opening having first and second sidewalls. The remaining collar oxide layer is lower than the remaining conductive layer. An angle implantation with F ions is performed on the first sidewall. A thermal oxidation process is performed to form a first oxide layer on the first sidewall and a second oxide layer on the second sidewall. The first oxide layer is thicker than the second oxide layer. The second oxide layer is removed to expose the second sidewall. A buried strap is formed at the bottom of the opening, insulated from the first sidewall by the first oxide layer.