Company Filing History:
Years Active: 2009
Title: Chih-Hao Cheng: Innovator in Semiconductor Technology
Introduction
Chih-Hao Cheng is a prominent inventor based in Taipei County, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of DRAM structures and finFET devices. With a total of 4 patents to his name, Cheng continues to push the boundaries of innovation in his field.
Latest Patents
Cheng's latest patents include a DRAM structure and a method of making the same. This DRAM structure features a substrate, a buried transistor with a fin structure, a trench capacitor, and a surface strap on the surface of the substrate. The surface strap is designed to electrically connect a drain region to the trench capacitor. Another notable patent is the method of forming a finFET device. This invention outlines a process that begins with the formation of a hard mask layer on an active area of a semiconductor substrate. A portion of the hard mask layer is etched to create a recess, followed by the deposition of a conformal gate defining layer. A tilt angle ion implantation process is then performed, and a part of the gate defining layer is removed to define a fin pattern. This fin pattern is subsequently transferred to the hard mask layer, which is used as an etching mask to form a fin structure in the semiconductor substrate.
Career Highlights
Chih-Hao Cheng is currently employed at Nan Ya Technology Corporation, where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the company's research and development efforts in this competitive industry.
Collaborations
Cheng has collaborated with notable colleagues, including Tzung-Han Lee and Chung-Yuan Lee. These partnerships have fostered a collaborative environment that enhances innovation and drives technological advancements.
Conclusion
Chih-Hao Cheng is a key figure in the semiconductor industry, with a focus on innovative technologies that improve DRAM structures and finFET devices. His contributions and collaborations continue to shape the future of semiconductor technology.