The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2009
Filed:
Dec. 03, 2007
Applicants:
Tzung-han Lee, Taipei, TW;
Chih-hao Cheng, Taipei County, TW;
Chung-yuan Lee, Tao-Yuan, TW;
Inventors:
Assignee:
Nanya Technology Corp., Kueishan, Tao-Yuan Hsien, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2006.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention discloses a structure of a buried word line, which comprises a semiconductor substrate having a U-shape trench, a U-shape gate dielectric layer in the U-shape trench, a polysilicon layer on the U-shape gate dielectric layer, a conducting layer on the polysilicon layer, and a cover dielectric layer on the conducting layer. The semiconductor structure may have a minimized size and when recess channels are formed thereby, the integration is accordingly improved without suffering from the short channel effect.