Company Filing History:
Years Active: 2011
Title: Chien-Hsun Chen: Innovator in Dynamic Random Access Memory Technology
Introduction
Chien-Hsun Chen is a notable inventor based in Taoyuan County, Taiwan. He has made significant contributions to the field of memory technology, particularly in dynamic random access memory (DRAM). His innovative work has led to the development of a unique self-alignment method that enhances the efficiency and performance of memory devices.
Latest Patents
Chien-Hsun Chen holds a patent for a self-alignment method for recess channel dynamic random access memory. This patent outlines a process that includes providing a substrate with a target layer, a barrier layer, and a lining layer. The target layer features shallow trench isolation structures. The method involves patternizing these layers to form recess trench channels, depositing a dielectric layer, and forming an ion-doped region in the target layer. The process continues with the removal of portions of the dielectric and filler layers, ultimately leading to the formation of a passivation layer and structural monomers at the recess trench channel.
Career Highlights
Chien-Hsun Chen is currently employed at Inotera Memories, Inc., where he continues to push the boundaries of memory technology. His work has been instrumental in advancing the capabilities of DRAM, making it more efficient and reliable for various applications.
Collaborations
Chien-Hsun Chen has collaborated with esteemed colleagues such as Tzung Han Lee and Chung-Lin Huang. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.
Conclusion
Chien-Hsun Chen's contributions to the field of dynamic random access memory technology exemplify his dedication to innovation. His patented self-alignment method represents a significant advancement in memory technology, showcasing his expertise and commitment to improving electronic devices.