The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2011
Filed:
Jun. 30, 2010
Chien-hsun Chen, Taoyuan County, TW;
Tzung Han Lee, Taipei, TW;
Chung-lin Huang, Taoyuan County, TW;
Chien-Hsun Chen, Taoyuan County, TW;
Tzung Han Lee, Taipei, TW;
Chung-Lin Huang, Taoyuan County, TW;
Inotera Memories, Inc., Taoyuan County, TW;
Abstract
A self-alignment method for a recess channel dynamic random access memory includes providing a substrate with a target layer, a barrier layer and a lining layer, wherein the target layer has shallow trench isolation structures; patternizing the lining layer, barrier layer and target layer to form recess trench channels; depositing a dielectric layer onto the recess trench channel; forming an ion doped region in the target layer; removing a portion of the dielectric layer to expose a portion of the recess trench channel; forming a filler layer covered onto the recess trench channel; removing a portion of the filler layer to expose a portion of the recess trench channel; forming a passivation layer onto the recess trench channel; removing the passivation layer on the lining layer; and removing the lining layer to form a plurality of structural monomers disposed at the recess trench channel and protruded from the target layer.