Hsinchu, Taiwan

Chiao-Yun Lin

This inventor holds 3 USPTO granted patents. Top assignee: Kingmax Technology Inc.. Active years: 1999-2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chiao-Yun Lin. Retrieved from https://idiyas.com/inventor/chiao-yun-lin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 3

Forward Citations = 55(Granted Patents)


Company Filing History:


Years Active: 1999-2001

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3 patents (USPTO):Explore Patents

Title: Chiao-Yun Lin: Innovator in Semiconductor Technology

Introduction

Chiao-Yun Lin is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of light-emitting devices. With a total of 3 patents to his name, Lin's work has advanced the efficiency and functionality of light-emitting diodes (LEDs) and laser diodes (LDs).

Latest Patents

One of Lin's latest patents is a semiconductor light-emitting device with a conductive window layer. This innovative device features a structure where the light-emitting area is either a double heterostructure or a multi-layer quantum well structure. The light-emitting area is formed on a substrate, and an electrically conductive oxide layer serves as a transparent window layer to eliminate the crowding effect. The substrate consists of a GaAs substrate and a GaAsP layer, which increases the band gap energy of the substrate. The oxide layer is made of AlZnO(x) material, known for its lower electrical resistivity and high transparency in the visible wavelength region. The window layer is formed using physical vapor deposition or metalorganic chemical vapor deposition techniques.

Another notable patent by Lin is a light-emitting diode with an anti-reflector. This design includes a semiconductor substrate of a first conductivity type, with a first electrode formed on part of the substrate. A reflection stack of the first conductivity type is created on the substrate, followed by the formation of an active layer on the reflection stack. An anti-reflection stack of a second conductivity type is then grown on the active layer, consisting of multiple layers with specific thicknesses. A window layer of the second conductivity type is formed on the anti-reflection stack, culminating in the addition of a second electrode on part of the window layer.

Career Highlights

Chiao-Yun Lin is currently employed at Kingmax Technology Inc., where he continues to innovate in the semiconductor field. His work has been instrumental in enhancing the performance of light-emitting devices, making them more efficient and effective for various applications.

Collaborations

Lin has collaborated with notable colleagues, including Ying-Fu Lin and Liang-Tung Tony Chang. These partnerships have fostered a creative environment that encourages the exchange of ideas and advancements in technology.

Conclusion

Chiao-Yun

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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