This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Chia-Hsuan Wang and Semiconductor Device Innovation.
Introduction
Chia-Hsuan Wang is an inventor associated with Hsinchu, Taiwan, and Taiwan Semiconductor Manufacturing Co., Ltd. The supplied information identifies her as a woman and credits her with 1 patent.
Latest Patents
Wang’s listed patent is “Method of Forming a Nano-FET Semiconductor Device.” The invention describes nanostructure devices and methods for making them, including a treatment process that expands sidewall spacer material to close a seam after deposition. Oxygen plasma treatment expands the material and crosslinks the open seam, producing a closed seam while lowering the material’s k-value and decreasing its density.
Career Highlights
Wang’s listed patent focuses on fabrication techniques for nano-FET semiconductor devices. The approach addresses seam formation in sidewall spacers, a feature relevant to the construction of nanostructure devices.
Collaborations
The supplied information lists Li-Chi Yu and Cheng-I Chu as Wang’s coworkers. Their names are provided as professional associations, though specific roles in the patent are not stated.
Conclusion
Chia-Hsuan Wang’s listed work reflects an innovation in semiconductor device fabrication, using oxygen plasma treatment to improve sidewall spacer formation in nano-FET structures.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile