Chi-Ray Huang

Title: Innovations of Chi-Ray Huang

Introduction

Chi-Ray Huang is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of memory technology, particularly in static random-access memory (SRAM). With a total of 3 patents, his work has advanced the efficiency and functionality of memory systems.

Latest Patents

Chi-Ray Huang's latest patents include a "Single port SRAM memory cell driven by two word lines in asynchronous manner and memory employing the same." This invention features a memory system composed of multiple single port SRAM memory cells, each controlled by two word lines in an asynchronous manner. The design incorporates a hold mode, a read mode, and a write mode, enhancing the operational capabilities of the memory cells. Another significant patent is the "Adaptive data-retention-voltage regulating system for SRAM." This system monitors the static noise margin of SRAM and includes a power supply unit, a data loss detector, and a dynamic regulating controller, which collectively improve data retention and reliability.

Career Highlights

Chi-Ray Huang is affiliated with National Cheng-Kung University, where he continues to engage in innovative research and development in memory technologies. His work has garnered attention for its practical applications in enhancing memory performance.

Collaborations

Some of his notable coworkers include Lih-Yih Chiou and Kuan-Lin Wu, who have collaborated with him on various projects related to memory technology.

Conclusion

Chi-Ray Huang's contributions to SRAM technology reflect his commitment to innovation and excellence in the field. His patents not only advance memory technology but also pave the way for future developments in this critical area.