Company Filing History:
Years Active: 1989-2000
Title: Chi-Chung Yang: Innovator in Semiconductor Technology
Introduction
Chi-Chung Yang is a notable inventor based in Troy, MI (US), recognized for his contributions to semiconductor technology. He holds 2 patents that reflect his innovative approach to materials science and energy conversion.
Latest Patents
One of his latest patents is titled "Semiconductor having large volume fraction of intermediate range order." This patent describes a high-quality non-single-crystal silicon alloy material that includes regions of intermediate range order (IRO) silicon alloy material. The material is designed to contain at least 8 volume percent of IRO material, which enhances its properties. The preparation of these materials involves chemical vapor deposition (CVD) with varying amounts of hydrogen dilution.
Another significant patent is for a "Thin film solar cell including a spatially modulated intrinsic layer." This invention features thin film solar cells where the intrinsic layer comprises a spatially graded band gap. The gradation is designed to improve the open circuit voltage and fill factor of the solar cell structure, thereby enhancing its efficiency.
Career Highlights
Chi-Chung Yang is currently associated with Energy Conversion Devices, Inc., where he applies his expertise in semiconductor materials to advance energy technologies. His work has significantly impacted the field of renewable energy, particularly in solar cell development.
Collaborations
Throughout his career, Yang has collaborated with esteemed colleagues such as Subhendu Guha and Stanford R. Ovshinsky. These collaborations have further enriched his research and innovation in the semiconductor domain.
Conclusion
Chi-Chung Yang's contributions to semiconductor technology and energy conversion are noteworthy. His innovative patents and collaborations highlight his role as a leading inventor in the field.