Chi-Cheng Yang

Title: Innovations by Chi-Cheng Yang in Semiconductor Technology

Introduction

Chi-Cheng Yang is an innovative inventor based in Hsin-Chu, Taiwan. He is recognized for his contributions to the field of semiconductor technology, particularly in the development of methods that enhance the effectiveness of diffusion barrier layers in aluminum-silicon contacts. His work is crucial in preventing undesirable interactions between aluminum interconnect metallizations and silicon device regions.

Latest Patents

Chi-Cheng Yang holds a significant patent titled "Diffusion barrier enhancement for sub-micron aluminum-silicon contacts." This invention outlines methods to enhance barrier layers essential for preventing aluminum penetration. The first method includes the use of dual layers of titanium nitride deposited on titanium disilicide. The first titanium nitride layer is achieved through rapid thermal annealing under a nitrogen-rich atmosphere, which simultaneously forms the titanium disilicide layer. The second layer is applied using reactive sputtering. Another method involves directly reactively sputtering titanium nitride onto an underlying titanium layer. This process is also followed by rapid thermal annealing in an ammonia and oxygen environment, leading to an oxygen-rich titanium nitride barrier. The barriers created by these innovative methods have proven to be more effective compared to those created by conventional processes.

Career Highlights

Chi-Cheng Yang is a valuable member of United Microelectronics Corporation, where he develops advanced semiconductor technologies. His work is instrumental in ensuring that the semiconductor components meet the rising demands for reliability and efficiency in electronic devices.

Collaborations

Throughout his career, Chi-Cheng has collaborated with notable colleagues, including Kuo-Yun Kuo and Jenn-Tarng Lin. These collaborations have contributed to enriching the research environment and fostering innovative solutions within the company.

Conclusion

Chi-Cheng Yang’s patent demonstrates a significant advancement in semiconductor technology, particularly in enhancing diffusion barrier effectiveness. His contributions are essential for the continued development of reliable and efficient electronic devices, showcasing the impact of innovation in the semiconductor industry.