Cherng-Yu Wang

Title: Cherng-Yu Wang: Innovator in Semiconductor Technology

Introduction

Cherng-Yu Wang is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor devices, particularly in the development of advanced capacitor technologies. His innovative work has led to the filing of a patent that enhances the performance of semiconductor devices.

Latest Patents

Wang holds a patent for "Semiconductor devices and methods for fabrication thereof." This patent describes a Metal-Insulator-Metal (MIM) capacitor that includes a straining layer on an electrode, along with a high-k dielectric layer formed on the straining layer. The straining layer enables the high-k dielectric layer to achieve high crystallization without the need for an additional annealing process. This high crystallization improves the dielectric value (k-value), thereby enhancing capacitance density in the MIM capacitor. Some embodiments of the invention include stacked MIM capacitors with symmetrically arranged high-k dielectric layers and straining layers.

Career Highlights

Cherng-Yu Wang is associated with Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this company has allowed him to focus on cutting-edge technologies that drive advancements in semiconductor fabrication.

Collaborations

Wang has collaborated with several talented individuals in his field, including Jen-Po Lin and Hsiao-Kuan Wei, who is a prominent female engineer contributing to semiconductor innovations.

Conclusion

Cherng-Yu Wang's contributions to semiconductor technology, particularly through his patented innovations, highlight his role as a key inventor in the industry. His work continues to influence the development of advanced semiconductor devices, showcasing the importance of innovation in technology.