Company Filing History:
Years Active: 2003
Title: Cher-Liang Cha: Innovator in Semiconductor Technology
Introduction
Cher-Liang Cha is a prominent inventor based in Singapore, known for his contributions to semiconductor technology. He has been instrumental in developing innovative methods for fabricating advanced electronic devices. With a total of two patents to his name, Cha continues to push the boundaries of technology in his field.
Latest Patents
Cher-Liang Cha's latest patents include a method for forming dual gate oxide thickness on vertical transistors by ion implantation. This method involves providing a substrate with first and second pillars, where specific walls are masked to allow for the implantation of dopants. The result is a structure where the gate oxide grown on modified surfaces is thicker than that on non-modified surfaces. Another significant patent is a method of fabricating a CMOS device with dual gate electrodes. This process includes forming a gate dielectric layer over a substrate and pillars, followed by the careful removal and oxidation of spacers to achieve varying gate oxide thicknesses.
Career Highlights
Cha is currently employed at Chartered Semiconductor Manufacturing Ltd, a leading corporation in the semiconductor industry. His work has significantly impacted the development of CMOS technology, enhancing the performance and efficiency of electronic devices.
Collaborations
Throughout his career, Cher-Liang Cha has collaborated with notable colleagues, including Chew-Hoe Ang and Eng-Hua Lim. These partnerships have fostered innovation and contributed to the advancement of semiconductor technologies.
Conclusion
Cher-Liang Cha's innovative work in semiconductor technology, particularly in the area of dual gate oxide thickness, showcases his expertise and commitment to advancing the field. His contributions continue to influence the development of modern electronic devices.