Beijing, China

Chenwei Tian

This inventor holds 1 USPTO granted patent. Top assignee: Beijing Institute of Petrochemical Technology. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chenwei Tian. Retrieved from https://idiyas.com/inventor/chenwei-tian

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Innovations by Chenwei Tian in Potentiometer Technology

Introduction

Chenwei Tian is an accomplished inventor based in Beijing, China. He has made significant contributions to the field of potentiometers, particularly through his innovative designs and methods. His work focuses on enhancing the efficiency and reliability of potentiometer devices.

Latest Patents

Chenwei Tian holds a patent for a potentiometer device and method for determining a number of closed DIP switches. This invention provides a unique solution by connecting a DIP switch structure in parallel with a potentiometer. The design allows for a required voltage division ratio to be achieved with high debugging speed and efficiency. It eliminates issues related to slide wear and resistor body wear, making it a robust choice for various applications.

Career Highlights

Chenwei Tian is affiliated with the Beijing Institute of Petrochemical Technology, where he continues to innovate and develop new technologies. His work has garnered attention for its practical applications and contributions to the field of electrical engineering.

Collaborations

Chenwei Tian collaborates with notable colleagues, including Xiaoping Tian and Changkuan Zou, who contribute to his research and development efforts.

Conclusion

Chenwei Tian's innovative work in potentiometer technology exemplifies the importance of advancements in electrical engineering. His patent reflects a commitment to improving device efficiency and reliability, marking him as a significant figure in his field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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