Hsinchu, Taiwan

Chenn-shiung Cheng

This inventor holds 3 USPTO granted patents. Top assignee: Industrial Technology Research Institute. Active years: 2001-2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chenn-shiung Cheng. Retrieved from https://idiyas.com/inventor/chenn-shiung-cheng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.6

ph-index = 2

Forward Citations = 13(Granted Patents)


Company Filing History:


Years Active: 2001-2006

Loading Chart...
3 patents (USPTO):Explore Patents

Title: Chenn-shiung Cheng: Innovator in Semiconductor Technology

Introduction

Chenn-shiung Cheng is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on improving the performance and reliability of semiconductor devices.

Latest Patents

One of his latest patents is titled "Ohmic contact to semiconductor devices and method of manufacturing the same." This invention discloses an ohmic contact for semiconductors and its manufacturing method. The present invention provides a low resistivity ohmic contact to enhance the performance and reliability of semiconductor devices. The ohmic contact is formed by first coating a transition metal and a noble metal on a semiconductor material. Following this, the transition metal and noble metal are heat-treated in an oxidizing environment to oxidize the transition metal. This ohmic contact primarily consists of a transition metal oxide and a noble metal. The oxide in the film can be a single oxide, a mixture of various oxides, or a solid solution of various oxides. The metal of the film can be a single metal, various metals, or an alloy thereof. The structure of the film can be a mixture, laminate, or multilayered, including oxide and metal. The layer structure includes at least one oxide layer and one metal layer, with at least one oxide layer in contact with the semiconductor.

Career Highlights

Chenn-shiung Cheng is associated with the Industrial Technology Research Institute, where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the field and enhancing the capabilities of semiconductor devices.

Collaborations

Chenn-shiung Cheng has collaborated with notable colleagues, including Jin-Kuo Ho and Chienchia Chiu. Their combined expertise has contributed to the success of various projects in semiconductor research.

Conclusion

Chenn-shiung Cheng is a key figure in semiconductor innovation, with a focus on developing efficient ohmic contacts for devices. His contributions are vital for the ongoing advancement of semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…