Busan, South Korea

Chengyeh Hsu

This inventor holds 1 USPTO granted patent and 7 published patent applications. Top assignee: Semes Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chengyeh Hsu. Retrieved from https://idiyas.com/inventor/chengyeh-hsu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Chengyeh Hsu: Supercritical-Fluid Substrate Processing

Introduction

Chengyeh Hsu is an inventor associated with Semes Co., Ltd. and based in Busan, South Korea. His patent work addresses substrate processing with supercritical fluids, with a focus on forming films in high-aspect-ratio trenches.

Latest Patents

Hsu is credited with 1 patent: “Apparatus and Method for Processing Substrate Using Supercritical Fluid.” The invention describes a process that alternates precursor-containing and reducing-fluid steps, along with pressure changes and venting cycles. By repeating these stages, the method aims to deposit a conformal film and fill trenches completely without voids.

Career Highlights

Hsu’s listed patent reflects work on semiconductor substrate processing and the use of supercritical fluids to address challenges in coating and filling narrow, deep structures. He is associated with Semes Co., Ltd.

Collaborations

Hae Won Choi and Thomas Jongwan Kwon are listed as Hsu’s coworkers. Their names are provided as professional associations, though specific roles in the patent are not stated.

Conclusion

Chengyeh Hsu’s patent focuses on a repeated supercritical-fluid process designed to improve conformal film deposition and void-free trench filling.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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